| PART |
Description |
Maker |
| IS24C128 IS24C128-2 IS24C128-3 IS24C128-3G IS24C12 |
131/072-bit 2-WIRE SERIAL CMOS EEPROM
131/072-bit2-WIRESERIALCMOSEEPROM
131,072-bit 2-WIRE SERIAL CMOS EEPROM 131,072线串行EEPROM中的CMOS
131,072-bit 2-WIRE SERIAL CMOS EEPROM 16K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
ETC
Integrated Silicon Solution, Inc.
|
| AT24C1024B-PU25 AT24C1024BW-SH25-B AT24C1024BW-SH2 |
Two-wire Serial EEPROM 1M (131,072 x 8)
|
ATMEL Corporation
|
| TC55V1001AF TC55V1001AF-10 TC55V1001AF-10L TC55V10 |
131,072-WORD BY 8-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| V29LC51001 |
1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| NM27C128 NM27C128Q200 NM27C128Q250 NM27C128Q150 |
131 /072-Bit (16K x 8) High Performance CMOS EPROM
131,072-Bit (16K x 8) High Performance CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| F29C51001 F29C51001B F29C51001T |
1MEGABIT(131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
|
Electronic Theatre Controls, Inc.
|
| IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AT25F1024A07 |
1Mbit High Speed SPI Serial Flash Memory 1M (131,072 x 8)
|
ATMEL Corporation
|
| TC55V2161FTI TC55V2161FTI-10 TC55V2161FTI-10L TC55 |
131,072 WORD BY 16 BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
